Reliable Temperature Measurement in Radiation-Intensive Environments
DOI:
https://doi.org/10.12962/jaree.v8i1.379Abstract
Radiation-resistant temperature sensors are vital for ensuring reliability in radiation-intensive environments, where the highly energetic and penetrating nature of radiation can significantly impact electronic devices and sensors. In such environments, like those near intense radiation sources or in challenging radiation-rich settings, such as space, gamma radiation can lead to erroneous measurements or equipment failures. Radiation-resistant sensors play a crucial role in maintaining measurement accuracy as they are designed to minimize interference caused by radiation, protecting electronic components and providing precise and reliable temperature readings. Their resilience to radiation-induced effects ensures data durability, reducing the need for frequent replacements, and enhancing the overall reliability of measurements in these demanding conditions. In this paper, we present and analyze two different configurations, aiming to address the challenges posed by radiation in sensitive environments. By exploring these novel approaches, we seek to enhance the robustness and accuracy of temperature sensors in radiation-intensive settings, enabling reliable data collection and facilitating successful operations in challenging radiation-rich conditions. The comparative analysis of these configurations will shed light on their performance and effectiveness in mitigating radiation-induced effects, thereby contributing to the advancement of radiation-resistant temperature sensing technologies.References
Tatjana Pešić-Brđanin, “Spice Modelling of Ionizing radiation effects in CMOS Devices” FACTA UNIVERSITATIS Series: Electronics and Energetics Vol. 30, No 2, June 2017, pp. 161 - 178 DOI: 10.2298/FUEE1702161P
Y. H. Lho, K. Y. Kim, “Radiation Effects on the Power MOSFET for Space Applications,” ETRI Journal, vol. 27, no. 4, Aug. 2005, pp. 449-452. DOI: 10.4218/etrij.05.0205.0031
S. Golubovic, S. Dimitrijev, D. Zupac, M. Pejovic and N. Stojadinovic, "Gamma-Radiation Effects in CMOS Transistors," ESSDERC '87: 17th European Solid State Device Research Conference, Bologna, Italy, 1987, pp. 725-728.
Nicolas Roisin, Thibault P. Delhaye, Nicolas André, Jean-Pierre Raskin, Denis Flandre, “Low-power silicon strain sensor based on CMOS current reference topology”, Sensors and Actuators A: Physical, Volume 339, 2022, 113491, ISSN 0924-4247.
C. Viale, P. Petrashin, L. Toledo, W. Lancioni and C. Vazquez, “Single event effects in an analog SOI transconductor: a case study”, 2015 16th Latin-American Test Symposium (LATS), 25-27 March 2015, DOI: 10.1109/LATW.2015.7102408
Felix Kunz, Pablo Petrashin, Gabriela Peretti, Eduardo Romero and Carlos Marqués, “Single-event Transients in OTA-C Analog Structures: A Case Study”. IETE, Journal of research. Volume 57, No 1, January-February 2011, ISSN 0377-2063
S. H. Carbonetto, M. A. García-Inza, J. Lipovetzky, E. G. Redin, L. Sambuco Salomone, and A. Faigon, “Zero temperature coefficient bias in MOS devices. dependence on interface traps density, application to MOS dosimetry,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, pp. 3348–3353, 2011.
M. Soubra, J. Cygler, and G. Mackay, “Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter,” Med. Phys., vol. 21, no. 4, pp. 567–572, 1994.
J. R. Schwank, M. R. Shaneyfelt, D. M. Fleetwood, et al., “Radiation Effects in MOS Oxides,” IEEE Trans. Nuclear Science, Vol. 55, no. 4, pp. 1833-1853, 2008.
“Temperature compensated low voltage MOSFET radiation sensor: proof of concept and a case study” Pablo Petrashin, Walter Lancioni, Juan Castagnola, Agustín Laprovitta. ISSN: 2579-6216 - Journal on Advanced Research in Electrical Engineering, Dec. 2020
“Embedded Radiation Sensor with OBIST Structure for Applications in Mixed Signal Systems”. Pablo Petrashin, Walter Lancioni, Juan Castagnola, Agustín Laprovitta. ISSN: 2579-6216 - Journal on Advanced Research in Electrical Engineering, Vol 5, No 2, pp114-119, Sept.2021
O. F. Siebel, M. C. Schneider and C. Galup-Montoro, “Low power and low voltage VT extractor circuit and MOSFET radiation dosimeter”, 10th IEEE International NEWCAS Conference, 17-20 June 2012, DOI: 10.1109/NEWCAS.2012.6329016
M.A. Carvajal, S. Garcia-Pareja, M. Vilches, D. Guirado, M. Anguiano, A.J. Palma, A.M. Lallena, “Simulated and experimental angular response of a commercial MOSFET used as dosimeter”, Proceedings of the 2009 Spanish Conference on Electron Devices - Feb 11-13, 2009. Santiago de Compostela, Spain.
O.F. Siebel, J.G. Pereira, M.C. Schneider, and C. Galup-Montoro, “A MOSFET dosimeter built on an off-the-shelf component for in vivo radiotherapy applications”, 2014 IEEE 5th Latin American Symposium on Circuits and Systems 25-28 Feb. 2014, DOI: 10.1109/LASCAS.2014.6820261
M. G. Buehler, B. R. Blaes, G. A. Soli, and G. R. Tardio, “ON-CHIP p-MOSFET DOSIMETRY”, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 40, NO. 6, DECEMBER 1993
Paul G. A. Jespers “A Simple graphical tool for MOS circuit analysis and design.”, internal report at Université Catholique de Louvain La Neuve, Belgium
O. F. Siebel, M. C. Schneider and C. Galup-Montoro, “Low power and low voltage VT extractor circuit and MOSFET radiation dosimeter”, 10th IEEE International NEWCAS Conference, 17-20 June 2012, DOI: 10.1109/NEWCAS.2012.6329016
M.A. Carvajal, S. Garcia-Pareja, M. Vilches, D. Guirado, M. Anguiano, A.J. Palma, A.M. Lallena, “Simulated and experimental angular response of a commercial MOSFET used as dosimeter”, Proceedings of the 2009 Spanish Conference on Electron Devices - Feb 11-13, 2009. Santiago de Compostela, Spain.
O.F. Siebel, J.G. Pereira, M.C. Schneider, and C. Galup-Montoro, “A MOSFET dosimeter built on an off-the-shelf component for in vivo radiotherapy applications”, 2014 IEEE 5th Latin American Symposium on Circuits and Systems 25-28 Feb. 2014, DOI: 10.1109/LASCAS.2014.6820261
Downloads
Published
Issue
Section
License
Copyright
Submission of a manuscript implies that the submitted work has not been published before (except as part of a thesis or report, or abstract); that it is not under consideration for publication elsewhere; that its publication has been approved by all co-authors. If and when the manuscript is accepted for publication, the author(s) still hold the copyright and retain publishing rights without restrictions. Authors or others are allowed to multiply article as long as not for commercial purposes. For the new invention, authors are suggested to manage its patent before published. The license type is CC-BY-NC 4.0.
Disclaimer
No responsibility is assumed by publisher and co-publishers, nor by the editors for any injury and/or damage to persons or property as a result of any actual or alleged libelous statements, infringement of intellectual property or privacy rights, or products liability, whether resulting from negligence or otherwise, or from any use or operation of any ideas, instructions, procedures, products or methods contained in the material therein.


